首页> 外文OA文献 >Effects of Temperature and Concentration of Indium within Bulk Cubic InxGa1-XN: Calculation of Steady State Electron Transport by Method of Monte Carlo Simulation

【2h】

Effects of Temperature and Concentration of Indium within Bulk Cubic InxGa1-XN: Calculation of Steady State Electron Transport by Method of Monte Carlo Simulation

机译：散装立方Inxga1-XN中温度和铟浓度的影响：通过蒙特卡罗模拟方法计算稳态电子传输

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
A. Hamdoune; N. Bachir;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis [J] . Stephen K. OLeary, Brian E. Foutz, Michael S. Shur, Applied Physics Letters . 2005,第22期

机译：块状纤锌矿型氮化铟中的稳态和瞬态电子传输：更新的半经典三谷蒙特卡洛模拟分析
2. The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis [J] . Stephen K. OLeary, Brian E. Foutz, Michael S. Shur, Journal of materials science . 2010,第3期

机译：体纤锌矿型氮化铟中电子传输对晶体温度，掺杂浓度和非抛物线系数变化的敏感性：最新的蒙特卡洛分析
3. The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis [J] . Stephen K. O’Leary, Brian E. Foutz, Michael S. Shur, Journal of Materials Science: Materials in Electronics . 2010,第3期

机译：体纤锌矿型氮化铟中电子传输对晶体温度，掺杂浓度和非抛物线系数变化的敏感性：最新的蒙特卡洛分析
4. Ensemble monte carlo study of electron transport in bulk indium nitride [C] . E.Bellotti, B.Doshi, K.F.Brennan, Symposium on GaN and related alloys . 1999

机译：块状氮化铟中电子传输的集成蒙特卡洛研究
5. THEORETICAL STUDIES OF HIGH ENERGY TRANSPORT OF ELECTRONS AND HOLES IN GALLIUM-ARSENIDE, INDIUM-PHOSPHIDE, INDIUM-ARSENIDE, AND GALLIUM-ANTIMONIDE (SEMICONDUCTORS, MONTE CARLO, IMPACT IONIZATION). [D] . BRENNAN, KEVIN FRANCIS. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓（半导体，蒙特卡罗，碰撞电离）中电子和空穴的高能输运的理论研究。
6. Monte Carlo simulation for Neptun 10 PC medical linear accelerator and calculations of output factor for electron beam [O] . Mohammad Taghi Bahreyni Toossi, Mehdi Momennezhad, Seyed Mohammad Hashemi 2012

机译：Neptun 10 PC医用线性加速器的蒙特卡洛模拟和电子束输出因子的计算
7. Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis [O] . N. E. Chabane-Sari, B. Bouazza, C. Sayah, 2013

机译：块状InAs，InP和GaAs中的稳态和瞬态电子传输：一种更新的半经典三谷蒙特卡洛模拟分析

Effects of Temperature and Concentration of Indium within Bulk Cubic InxGa1-XN: Calculation of Steady State Electron Transport by Method of Monte Carlo Simulation

著录项

引文网络

相似文献

相关主题

期刊订阅