Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

摘要

The electronic band structure of thin films and superlattices made of Heuslercompounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied bymeans of polarization dependent hard x-ray photoelectron spectroscopy. Thelinear dichroism allowed to distinguish the symmetry of the valence states ofthe different types of layered structures. The films exhibit a larger amount of{it "in-gap"} states compared to bulk samples. It is shown that the films andsuperlattices grown with NiTiSn as starting layer exhibit an electronicstructure close to bulk materials.