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Hot Electron Generation in Silicon Micropyramids Covered with Nanometer-Thick Gold Films for Near-Infrared Photodetectors

机译：硅片中的热电子发电覆盖有纳米厚的金膜，用于近红外光电探测器

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1. Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation [J] . Ming Lei, J. Price, M. C. Downer Applied Physicsletters . 2010,第24期

机译：通过光学二次谐波测量，从纳米厚绝缘体上硅膜中注入热载流子
2. Near-Infrared Absorption Enhancement Mechanism Investigations of Deep-Trench Silicon Microstructures Covered with Gold Films [J] . Liu Xiaoyi, Gao Jinsong, Yang Haigui, Plasmonics . 2016,第4期

机译：金膜覆盖的深沟道硅微结构的近红外吸收增强机理研究
3. Core-shell silicon nanowire array-Cu nanofilm Schottky junction for a sensitive self-powered near-infrared photodetector [J] . Wu Chun-Yan, Pan Zhi-Qiang, Wang You-Yi, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2016,第46期

机译：核壳硅纳米线阵列-铜纳米膜肖特基结，用于敏感的自供电近红外光电探测器
4. Poly-Ge near-infrared photodetectors for silicon based optoelectronics [C] . Masini G., Colace L., Assanto G. Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on . 2003

机译：硅基光电电子的Poly-Ge近红外光电探测器
5. Silicon metal-semiconductor-metal photodetectors: Ion-implanted high-speed near-infrared photodiodes and position-sensitive photodetectors. [D] . Scott, Kristin Anne McArdle. 1997

机译：硅金属半导体金属光电探测器：离子注入高速近红外光电二极管和位置敏感型光电探测器。
6. Silicon/2D-material photodetectors: from near-infrared to mid-infrared [O] . Chaoyue Liu, Jingshu Guo, Laiwen Yu, 2021

机译：硅/ 2D-材料光电探测器：从近红外到中红外线
7. Cover Picture: Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap? (Angew. Chem. Int. Ed. 25/2015) [O] . Jinxuan Liu, Wencai Zhou, Jianxi Liu, 2015

机译：封面图片：光抑制电荷载体在外延MOF薄膜中产生：由于间接电子频带差距的高效率？（Angew。化学。int。ed。25/2015）

Hot Electron Generation in Silicon Micropyramids Covered with Nanometer-Thick Gold Films for Near-Infrared Photodetectors

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