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Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

机译：不同类型多晶硅硅晶界特征和位错密度的研究

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Gaute Stokkan; Adolphus Song; Birgit Ryningen;
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1. Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon [J] . Gaute Stokkan, Adolphus Song, Birgit Ryningen Crystals . 2018,第9期

机译：不同类型多晶硅硅晶界特征和位错密度的研究
2. The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon [J] . E. Schmid, S. Würzner, C. Funke, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2012,第3期

机译：多晶硅中位错的空间排列，晶粒取向和晶界之间的相关性
3. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration [J] . T. Buonassisi, A. A. Istratov, M. D. Pickett, Applied Physics Letters . 2006,第4期

机译：硅晶界处的金属沉淀：取决于晶界特征和位错修饰
4. An investigation of dislocations in multicrystalline silicon: Distribution and interaction with grain boundaries [C] . Jun Chen, Jianyong Li, Ronit R.Prakash, International photovoltaic science and engineering conference . 2012

机译：多晶硅中位错的研究：晶界的分布和相互作用
5. Grain boundary dynamics during directional solidification of multicrystalline silicon [D] . Chuang Lu-Chung 2019

机译：多晶硅定向凝固过程中的晶界动力学
6. Guidelines for establishing an etching procedure for dislocation density measurements on multicrystalline silicon samples [O] . Krzysztof Adamczyk, Gaute Stokkan, Marisa Di Sabatino 2018

机译：建立用于在多晶硅样品上进行位错密度测量的蚀刻程序的准则
7. Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography [O] . Lotharukpong, C., Tweddle, D., Martin, T. L., 2018

机译：使用原子探针层析成像技术对多晶硅中晶界和孤立位错进行元素表征的样品制备方法

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

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