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The importance of annealing and stages coverage on the epitaxial growth of complex oxides on silicon by pulsed laser deposition

机译：退火和阶段覆盖对脉冲激光沉积硅复合氧化物外延生长的重要性

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Daniel Diaz-Fernandez; Matjaž Spreitzer; Tjaša Parkelj; Janez Kovač; Danilo Suvorov;
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1. The importance of annealing and stages coverage on the epitaxial growth of complex oxides on silicon by pulsed laser deposition [J] . Daniel Diaz-Fernandez, Matja? Spreitzer, Tja?a Parkelj, RSC Advances . 2017,第40期

机译：退火和阶段覆盖对通过脉冲激光沉积在硅上复合氧化物外延生长的重要性
2. Correlation of the growth rate for selective epitaxial growth of silicon and oxide thickness and oxide coverage in a reduced pressure chemical vapor deposition pancake reactor [J] . Kung-Yen Lee Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第5期

机译：减压化学气相沉积煎饼反应器中硅选择性外延生长的生长速率与氧化物厚度和氧化物覆盖率的相关性
3. Epitaxial growth of oxides on metals using pulsed laser deposition with a pulsed oxygen source [J] . C H Wang, T J Jackson, R E Somekh Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 1997,第11期

机译：使用脉冲氧气源通过脉冲激光沉积在金属上外延生长氧化物
4. Epitaxial growth of 1 /spl mu/m thick nonlinear optical KNbO/sub 3/ thin films by pulsed laser deposition with in situ laser annealing [C] . Machida, A., Ishida, . 1999

机译：通过脉冲激光沉积与原位激光退火外延生长1 / spl mu / m厚的非线性光学KNbO / sub 3 /薄膜
5. Growth and characterization of epitaxially aligned titanium nitride thin films on silicon by orthogonally crossed-beam pulsed laser deposition. [D] . Kang, Sukill. 2001

机译：通过正交交叉束脉冲激光沉积在硅上外延取向氮化钛薄膜的生长和表征。
6. Growth mechanism of epitaxial YSZ on Si by Pulsed Laser Deposition [O] . David Dubbink, Gertjan Koster, Guus Rijnders -1

机译：脉冲激光沉积在硅上外延生长YSZ的机理
7. Epitaxial Oxides on Silicon by Pulsed Laser Deposition [O] . Dubbink, D. 2017

机译：脉冲激光沉积在硅上的外延氧化物
8. Epitaxial growth of oxide thin films on (001) metal surfaces using pulsed-laser deposition [R] . Norton, D. P. , Park, C. , Saffian, B. 1997

机译：使用脉冲激光沉积在（001）金属表面上外延生长氧化物薄膜

The importance of annealing and stages coverage on the epitaxial growth of complex oxides on silicon by pulsed laser deposition

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