首页> 外文OA文献 >New catalysts based on silicon carbide support for improvements in the sulfur recovery. Silicon carbide as support for the selective H2S oxidation

【2h】

New catalysts based on silicon carbide support for improvements in the sulfur recovery. Silicon carbide as support for the selective H2S oxidation

机译：基于碳化硅载体的新型催化剂，以改善硫回收率。碳化硅作为选择性H2S氧化的支持

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Nicolas Keller; Ricardo Vieira; Jean-Mario Nhut; Cuong Pham-Huu; Marc J. Ledoux;
展开▼
作者单位

展开▼
年度 2005
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. New catalysts based on silicon carbide support for improvements in the sulfur recovery. Silicon carbide as support for the selective H2S oxidation [J] . Cuong Pham-huu, Jean-mario Nhut, Marc J. Ledoux, Journal of the Brazilian Chemical Society . 2005,第2期

机译：基于碳化硅的新型催化剂支持改善硫的回收率。碳化硅作为选择性H2S氧化的载体
2. New catalysts based on silicon carbide support for improvements in the sulfur recovery. Silicon carbide as support for the selective H2S oxidation [J] . Keller N, Vieira R, Nhut JM, Journal of the Brazilian Chemical Society . 2005,第2期

机译：基于碳化硅的新型催化剂支持改善硫的回收率。碳化硅作为选择性H2S氧化的载体
3. New catalysts based on silicon carbide support for improvements in the sulfur recovery. New silicon carbide nanotubes as catalyst support for the trickle-bed H2S oxidation [J] . Keller N, Vieira R, Nhut JM, Journal of the Brazilian Chemical Society . 2005,第3b期

机译：基于碳化硅的新型催化剂支持改善硫的回收率。新型碳化硅纳米管作为滴流床H2S氧化的催化剂载体
4. Pressure Drop Measurement and Modeling of Silicon Carbide (SiC) Foam for Use as Catalyst Support [C] . M. LACROIX, D. EDOUARD, C. PHAM-HUU International Conference on Porous Metals and Metal Foaming Technology . 2008

机译：用作催化剂载体的碳化硅（SiC）泡沫的压降测量和建模
5. Microstructural and chemical study of silicon dioxide/silicon carbide interfaces and correlations with electrical properties of silicon carbide MOS diodes and silicon carbide MOSFETs . [D] . Chang, Kai-Chieh. 2003

机译：二氧化硅/碳化硅界面的微结构和化学研究及其与碳化硅MOS二极管和碳化硅MOSFET的电学性质的关系。
6. Exposure to Fibres Crystalline Silica Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry [O] . S. Føreland, E. Bye, B. Bakke, -1

机译：挪威碳化硅行业中纤维结晶二氧化硅碳化硅和二氧化硫的暴露
7. Nanoporous silicon carbide as nickel support for the carbon dioxide reforming of methane [O] . Hoffmann, Claudia, Plate, P., Steinbrück, A., 2015

机译：纳米多孔碳化硅作为镍载体用于甲烷的二氧化碳重整
8. High Temperature Emittance of Silicon Carbide Based Materials. Volume 1. HighTemperature Normal Spectral Emittance of Silicon Carbide Based Materials. Volume 2. Effects of Heat Treatments on the Emittance of Silicon Carbide Based Materials. Topical Report [R] . Sikka, K. K., Postlethwait, M. A., Modest, M. F., 1993

机译：碳化硅基材料的高温发射率。第1卷：碳化硅基材料的高温正常光谱发射率。第2卷。热处理对碳化硅基材料发射率的影响。专题报道

New catalysts based on silicon carbide support for improvements in the sulfur recovery. Silicon carbide as support for the selective H2S oxidation

著录项

引文网络

相似文献

相关主题

期刊订阅