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Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate

机译：从图案化的GaAs衬底生长的单一三维限制GaAs / Alas结构的尖锐发光线

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Jun-ichi Kasai; Sigehisa Tanaka; Katsuhiko Higuchi; Yoshifumi Katayama;
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年度 1999
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专利

1. Molecular-beam epitaxial growth of pyramidal structures on patterned GaAs [100] substrates for three-dimensionally confined structures [J] . Lopez M., Ishikawa T. Electronics Letters . 1993,第25期

机译：三维受限结构的图案化GaAs [100]衬底上锥体结构的分子束外延生长
2. AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (nll) A substrates [J] . P.O. Vaccaro, K.Koizumi, K.Fujita Microelectronics Journal . 1999,第4a5期

机译：GaAs（nll）A衬底上通过分子束外延生长的GaAs / AlGaAs / AlAs异质结构中的AlAs氧化过程
3. Self-Limiting MBE Growth and Characterization of Three-Dimensionally Confined Nanostructures on Patterned GaAs (311)A Substrates [J] . ZHICHUAN NIU, RICHARD NOTZEL, UWE JAHN Journal of Electronic Materials . 1999,第1期

机译：GaAs（311）A衬底上的自限MBE生长和三维受限纳米结构的表征
4. Transport properties of AlAs/GaAs multilayer structures grown on (311)A GaAs substrates [C] . I.A.Panaev, V.Ya.Prinz, A.B.Vorobev, International symposium on compound semiconductors . 1997

机译：在（311）上生长的ALAS / GAAs多层结构的运输特性A GaAs基材
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature [O] . Mohamed Benyoucef, Verena Zuerbig, Johann Peter Reithmaier, 2012

机译：高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
7. Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates [O] . Niu ZC, Notzel R, Jahn U, 1999

机译：GaAs（311）A衬底上MBE的自限生长和三维受限纳米结构的表征
8. In(0.25)Ga(0.75)As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned andNon-Patterned GaAs (100) Substrates [R] . Kapre, R., Madhukar, A., Guha, S. 1990

机译：在预图案化和非图案化Gaas（100）衬底上生长的（0.25）Ga（0.75）as / alas基谐振隧道二极管

Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate

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