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Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

机译：高性能P ++ - GaAs / N ++ - GaAs隧道交叉路口与硅和碲共掺杂Ingaas量子井插入的实验和建模研究

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Yudan Gou; Jun Wang; Yang Cheng; Yintao Guo; Xiao Xiao; Heng Liu; Shaoyang Tan; Li Zhou; Huomu Yang; Guoliang Deng; Shouhuan Zhou;
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1. Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells [J] . U. Aeberhard Physical review . 2013,第8期

机译：多结太阳能电池InAlGaAs / InGaAs体和量子阱带间隧道结中直接和声子辅助隧穿电流的理论研究
2. Superconducting junctions using a 2DEG in a strained InAs quantum well inserted into an InAlAs/InGaAs MD structure [J] . Akazaki T., Nitta J. IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：在插入InAlAs / InGaAs MD结构的应变InAs量子阱中使用2DEG进行超导结
3. Superconducting junctions using a 2DEG in a strained InAs quantum well inserted into an InAlAs/InGaAs MD structure [J] . Akazaki T., Nitta J., Takayanagi H., IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：在插入InAlAs / InGaAs MD结构的应变InAs量子阱中使用2DEG进行超导结
4. Optimization of tellurium doped InGaAs grown by MOCVD for solar cell tunnel junctions application [C] . Byrnes Daniel P., Ebert Chris, Pulwin Ziggy, IEEE Photovoltaic Specialists Conference . 2014

机译：MOCVD生长的碲掺杂InGaAs在太阳能电池隧道结应用中的优化
5. MOCVD Growth and Modeling of Quantum-well Solar Cells and Tunnel Junctions. [D] . Carlin, Conrad Zachary. 2016

机译：MOCVD生长以及量子阱太阳能电池和隧道结的建模。
6. Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions [O] . Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, 2019

机译：隧穿原子层沉积氧化铝：硅结的表面钝化的相关结构/电性能研究
7. Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells [O] . Aeberhard, Urs 2012

机译：直接和声子辅助隧道效应的理论研究 InalGaas-InGaas体和量子阱带间隧道结中的电流用于多结太阳能电池

Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

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