REALIZATION AND PERFORMANCE ESTIMATION OF INTEGRATED CMOS LNA WITH F-INVERTED ANTENNA FOR MOBILE COMMUNICATION

摘要

The Ultra-wideband Transceiver systems are finding their mammothexistence with the mobile communication evolutions. The use ofCMOS can not only miniaturized the system but also is designed toreduce convincingly overall thermal imprint and RF powerconsumption [1]. Nevertheless utilization of silicon as is traditional inthe high-frequency Low Noise Amplifier market for short rangeproducts such as Bluetooth and WiFi, but this smart material faces areal confrontation for the signal amplification needed for longerrange mobile phone transmissions. This work focuses on theIntegration of the CMOS LNA with F – Inverted Antenna for widerange of frequency. An F-Inverted Compact Antenna using standardcommercial TSMC 90µm CMOS process technology is introduced. ACo-design of this Electromagnetic Radiator combined with a twostage LNA including impedance matching network is implemented.This co-design allows a gain of more than 20 dB at 5GHz operationalfrequency with considerable limited on-chip area occupation. Thesimulation results indicate that at 5GHz with 2.5V signal, low noiseamplifier has achieved power gain of 22dB, 1dB compression poweroutput (P-1) of 13.2dBm and maximum power added efficiency (PAE)of 45.2% with power consumption of 17mW.