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Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio

机译：增强HF0.5ZR0.5O2薄膜的单极电阻切换特性，具有高开/关比

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Zhipeng Wu; Jun Zhu;
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1. Enhanced Unipolar Resistive Switching Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films with High ON/OFF Ratio [J] . Zhipeng Wu, Jun Zhu Materials . 2017,第3期

机译：高开/关比的Hf 0.5 Zr 0.5 O 2薄膜的增强单极电阻开关特性
2. Enhanced Unipolar Resistive Switching Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films with High ON/OFF Ratio [J] . Zhipeng Wu, Jun Zhu Materials . 2017,第3期

机译：高开/关比的Hf 0.5 Zr 0.5 O 2薄膜的增强单极电阻开关特性
3. Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications [J] . Hao Aize, Ismail Muhammad, He Shuai, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2018,第期

机译：改善非易失性存储器应用的Au掺杂镍铁氧体磁性薄膜的单极电阻切换特性
4. Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics [C] . Yi-Jen Huang, I-Chung Shih, Shih-Chun Chao, IEEE International Nanoelectronics Conference . 2014

机译：基于超薄a-TiOx薄膜的低工作电压透明电阻式随机存取存储器（T-RRAM）及其电阻切换特性
5. Resistive Switching Effects of Vanadium Pentoxide Thin Film [D] . Wan, Zhenni. 2018

机译：五氧化二钒薄膜的电阻转换效应
6. Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio [O] . Zhipeng Wu, Jun Zhu 2017

机译：具有高开/关比的Hf0.5Zr0.5O2薄膜的增强的单极电阻开关特性
7. Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films [O] . Shen, Wan, Dittmann, Regina, Waser, Rainer 2010

机译：多晶钛酸锶锶薄膜中双极性和单极性电阻转换的可逆交替

Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio

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