Gate-level dual-threshold static power optimization methodology (GDSPOM) for designing high-speed low-power SOC applications using 90nm MTCMOS technology

摘要

As integrated-circuits (IC) technology advances into the deep-submicron (DSM) regime, more functionality can be combined onto a single chip. One major challenge in designing such a complex device is to keep the power consumption in check while capitalizing on the highest performance that DSM technology can offer. In this thesis we describe a novel gate-level dual-threshold static power optimization methodology (GDSPOM), which is based on the static timing analysis technique for designing high-speed low-power SOC applications using 90nm MTCMOS technology. The cell libraries come in fixed threshold - high Vt for good standby power and low Vt for high-speed. Based on this optimization technique using two cell libraries with different threshold voltages, a 16-bit multiplier using the dual-threshold cells meeting the speed requirement has been designed to have a 50% less leakage power consumption when compared to the one using only the low-threshold cell library.