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Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma

机译：电场增强的表征导致电路布局依赖性损伤的低k薄膜在暴露于处理等离子体时

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Taro Ikeda; Akira Tanihara; Nobuhiko Yamamoto; Koji Eriguchi;
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1. Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma [J] . Ikeda Taro, Tanihara Akira, Yamamoto Nobuhiko, Journal of Applied Physics . 2019,第8期

机译：电场增强特性导致暴露于处理等离子体时导致低k膜的电路布局相关损坏
2. Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-k Films with Plasma Damage Resistance [J] . Yoshi Ohashi, Nobuo Tajima, Yonghua Xu, Japanese journal of applied physics . 2010,第5issue3期

机译：关于抗等离子体损伤的SiOCH低k膜的等离子体化学气相沉积新前驱体的建议
3. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process [J] . Saburo Uchida, Seigo Takashima, Masaru Hori, Journal of Applied Physics . 2008,第7pa1期

机译：由于等离子体刻蚀过程中的辐射，自由基和离子，导致低k多孔SiOCH薄膜的等离子体损坏机理
4. Analysis of an Extreme Low-K Organosilicate Dielectric Film Exposed to Representative Plasmas and to a Restorative Process [C] . M. Colburn, S. Nitta, J. Zinter, Advanced Metallization Conference . 2004

机译：对代表性等离子体暴露于恢复过程的极端低k有机硅酸盐介电膜的分析
5. The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films. [D] . Barela, Marcos J. 2003

机译：基于八氟环丁烷的等离子放电的特征，用于二氧化硅和低K介电薄膜的选择性刻蚀和处理。
6. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects [O] . Hideharu Shimizu, Shuji Nagano, Akira Uedono, 2013

机译：用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
7. Minimizing Plasma Damage and in situ Sealing of Ultra Low-k Dielectric Films by using Oxygen Free Fluorocarbon Plasmas [O] . Mannaert G., Baklanov M. R., Le Q. T., 2005

机译：使用无氧碳氟化合物等离子体将等离子体损伤和超低k介电薄膜的原位密封降至最低

Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma

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