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Techniques for the design of a low noise, high dynamic range, high gain, wideband amplifier for analogue OEIC applications

机译:用于模拟OEIC应用的低噪声,高动态范围,高增益,宽带放大器设计技术

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摘要

Various techniques for the Design of a Low Noise, High Dynamic Range, High Gain, Wideband Amplifier for Analogue OEIC Applications, such as radar receiver arrays for electronic warfare applications were developed and investigated in this work. Firstly, the available transistor technologies, semiconductor technologies and photodetector technologies and their pros and cons in light of the target application type are investigated in order to decide on the technologies best suited for this research, and justification of the chosen options are presented. Secondly, three different known amplifier topologies are discussed and their linearity, gain, bandwidth, SFDR, and other performances are compared via simulations calibrated against measured results. The results from the comparisons are analysed and the amplifier topology most suitable for this work is chosen based on these results. Thirdly, three different circuit alteration techniques for improving the linearity and SFDR of the previously chosen amplifier topology are developed, analysed and verified through simulations. It is shown that these techniques can be combined to gain further improvement in overall performance. And finally, the influence of various geometrical and doping alterations of the transistor on desired figures of merit, i.e. gain, bandwidth, linearity, etc. are investigated in detail using two-dimensional physical device simulations calibrated against measured results of an InP/InGaAs single heterojunction bipolar transistor. The device simulations were carried out using Technology-Computer-Aided-Design (TCAD) within the SILVACO software package. The results are then used to suggest techniques to improve performance at the transistor level.
机译:在这项工作中,开发并研究了用于模拟OEIC应用的低噪声,高动态范围,高增益,宽带放大器设计的各种技术,例如电子战应用的雷达接收器阵列。首先,根据目标应用类型研究了可用的晶体管技术,半导体技术和光电检测器技术以及它们的优缺点,以便确定最适合本研究的技术,并提出了选择方案的合理性。其次,讨论了三种不同的已知放大器拓扑,并通过针对测量结果校准的仿真比较了它们的线性,增益,带宽,SFDR和其他性能。分析比较的结果,并根据这些结果选择最适合此工作的放大器拓扑。第三,通过仿真开发,分析和验证了三种不同的电路变更技术,以改善先前选择的放大器拓扑的线性度和SFDR。结果表明,可以组合使用这些技术来进一步提高整体性能。最后,使用针对InP / InGaAs单晶测量结果校准的二维物理器件仿真,详细研究了晶体管的各种几何和掺杂变化对所需品质因数(即增益,带宽,线性等)的影响。异质结双极晶体管。使用SILVACO软件包中的技术-计算机辅助设计(TCAD)进行了设备仿真。然后将结果用于建议可改善晶体管级性能的技术。

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    Taher S;

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