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Correlation of Raman and X-Ray Diffraction Measurements of Annealed Pulsed Laser Deposited ZnO Thin Films.

机译:退火脉冲激光沉积ZnO薄膜拉曼光谱和X射线衍射测量的相关性。

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摘要

Raman spectroscopy, X-ray diffractometry and atomic force microscopy have been used to characterise ZnO thin films grown by pulsed laser deposition as a function of the post-growth annealing temperature. The results show substantial enhancement and broadening of certain Raman features which correlate excellently with the change in width of the X-ray diffraction peaks. The 570 cm[-1] Raman feature showed pronounced asymmetry and enhanced intensity in the unannealed sample. An increase in grain size observed after subsequent annealing produced a substantial reduction in both the asymmetry and intensity of this peak. Our experimental data suggest that electric fields, due to charge trapping at grain boundaries, in conjunction with localised and surface phonon modes are the cause of the intensity enhancement and asymmetry of this feature.
机译:拉曼光谱法,X射线衍射法和原子力显微镜已被用来表征通过脉冲激光沉积而生长的ZnO薄膜,其是生长后退火温度的函数。结果显示某些拉曼特征的显着增强和扩展,这些特征与X射线衍射峰的宽度变化极好相关。 570 cm [-1]拉曼特征在未退火的样品中表现出明显的不对称性和增强的强度。在随后的退火后观察到的晶粒尺寸的增加使该峰的不对称性和强度均大大降低。我们的实验数据表明,由于电荷在晶界处俘获,加上局部和表面声子模式,电场是此特征强度增强和不对称的原因。

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