Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs

摘要

GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison. The thermal stability of the Pd/Sn, Pd/Ge and Pd/Sn/Au ohmic contacts is also presented