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Pulsed laser deposition and characterisation of ZnO and aluminium-doped ZnO nanostructures on silicon and flexible plastic substrates

机译:脉冲激光沉积和在硅和柔性塑料基板上表征ZnO和铝掺杂的ZnO纳米结构

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摘要

We have developed recipes for the catalyst-free growth of upstanding/vertically aligned ZnO nanorods featuring core/shell or interconnected core/shell architectures on ZnO-seeded Si (100) substrates using the pulsed laser deposition (PLD) technique. The structural, morphological and luminescent properties of these ZnO nanorod samples were established. A ZnO emission band at 3.331 eV was observed in the core/shell and interconnected core/shell nanorod architectures and its origin linked to the defects observed at the crystalline/amorphous interface of the core/shell structure. This particular defect PL emission appears to be a new observation for ZnO.udWe have grown vertically aligned ZnO nanorods on PLD prepared ZnO-seeded Si substrates by catalyst-free vapour phase transport (VPT). The nanorods featured excellent optical properties and a coverage density higher than previously published data. The structural, morphological and luminescent properties of the seed layers and nanorods were inter-compared. Importantly, we also compared the near band edge emission of such VPT-and PLD-deposits, with a focus on the identification of the origin of the emission feature at 3.331 eV.udWe have researched the room temperature PLD growth of highly transparent and conductive ZnO and Al-doped ZnO (AZO) nanocrystalline thin films on flexible Zeonor plastic substrates. The trends for the growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of 65 nm - 420 nm thick ZnO/AZO films grown on Zeonor substrates were analysed as a function of oxygen growth pressure (1-300 mTorr). The as-grown films showed highly reproducible deposition behaviour, and featured high transmittance, low-electrical resistance, optical smoothness, low residual stress, and hydrophobicity.udThe results presented in this thesis are discussed in the context of prospective
机译:我们已经开发了使用脉冲激光沉积(PLD)技术在具有ZnO种子的Si(100)衬底上以核/壳或互连的核/壳结构为特征的直立/垂直排列的ZnO纳米棒的无催化剂生长的配方。建立了这些ZnO纳米棒样品的结构,形态和发光特性。在核/壳和相互连接的核/壳纳米棒结构中观察到了3.331 eV的ZnO发射带,其起源与在核/壳结构的晶体/非晶界面处观察到的缺陷有关。这种特殊的缺陷PL发射似乎是对ZnO的新观察。 ud我们通过无催化剂气相传输(VPT)在PLD制备的ZnO接种的Si衬底上生长了垂直排列的ZnO纳米棒。纳米棒具有出色的光学性能,覆盖密度高于以前公布的数据。种子层和纳米棒的结构,形态和发光特性是相互比较的。重要的是,我们还比较了此类VPT和PLD沉积物的近带边缘发射,重点是在3.331 eV处确定发射特征的起源。 ud我们研究了高度透明和导电的室温PLD生长柔性Zeonor塑料基板上的ZnO和Al掺杂的ZnO(AZO)纳米晶体薄膜。分析了在Zeonor衬底上生长的65 nm-420 nm厚ZnO / AZO薄膜的生长速率,表面形态,疏水性以及结构,光学和电学性质随氧气生长压力(1-300 mTorr)的变化趋势。所生长的薄膜表现出高度可再现的沉积行为,并具有高透射率,低电阻,光学平滑度,低残余应力和疏水性的特点。 ud本文在前瞻性的背景下讨论了本文的结果。

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    Inguva Saikumar;

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  • 年度 2016
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