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Investigations on the non-ideality of the base current of RF bipolar transistors

机译：射频双极晶体管基极电流的非理想性研究

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Schippel Christian; Schwierz Frank; Fu Jun;
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年度 2009
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正文语种 eng
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专利

1. An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistors [J] . Chantre A., Festes G. IEEE Transactions on Electron Devices . 1991,第6期

机译：先进的自对准“蚀刻多晶硅”发射极双极晶体管中非理想基极电流的研究
2. Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures [J] . Zhi Jin, W. Prost, S. Neumann, Applied Physics Letters . 2004,第15期

机译：电流传输机制及其对不同基础结构的InP基双异质结双极晶体管性能的影响
3. Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process [J] . Shahriar JAMASB Turkish Journal of Electrical Engineering and Computer Sciences . 2019,第5期

机译：基于界面处理过程的变化，对多晶硅 - 发射极双极晶体管中聚/单晶硅界面的运输机理研究
4. Investigation of double-emitter reduced-surface-field horizontal current bipolar transistor breakdown mechanisms [C] . Marko Koričić, Josip Žilak, Tomislav Suligoj IEEE Bipolar/BiCMOS Circuits and Technology Meeting . 2016

机译：双发射极减小表面场水平电流双极晶体管的击穿机理研究
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Theoretical Investigation of the Noise Performance of Active Pixel Imaging Arrays Based on Polycrystalline Silicon Thin Film Transistors [O] . Martin Koniczek, Larry E. Antonuk, Youcef El-Mohri, -1

机译：基于多晶硅薄膜晶体管的有源像素成像阵列噪声性能的理论研究
7. Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process [O] . Shahriar JAMASB 2019

机译：基于界面处理过程的变化，对多晶硅 - 发射极双极晶体管中聚/单晶硅界面的运输机理研究
8. Influence of Pseudomorphic Base-Emitter Spacer Layers on Current-InducedDegradation of Beryllium-Doped InGaAs/InAlAs Heterojunction Bipolar Transistors [R] . Zhang, K., Zhang, X., Bhattacharya, P., 1996

机译：假晶基极 - 发射极间隔层对铍掺杂InGaas / Inalas异质结双极晶体管电流诱导退化的影响

Investigations on the non-ideality of the base current of RF bipolar transistors

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