A new SiC/HfB2 based micro hotplate for metal oxide gassensors

摘要

A new SiC/HfB2-based micro hotplate with ultra low power consumption for the application in metal oxide micro gas sensors is developed and demonstrated. For the first time, silicon carbide (SiC) and Hafniumdiboride (HfB2) are used as materials for a micro hotplate structure. Using only slight modifications of the fabrication process, the device can be used either for automotive applications with operating voltages of 12V-24V or for battery operated handheld detectors with operating voltages of 1V-2V for a variety of different gases. It is the first micro hotplate device ever designed to work for low battery voltages of 1V-2V. The modular approach towards the processing allows easy modification for a variety of application fields and thus also reduces market entrance barriers. Based on the market development of micro sensors, the industrial requirements, and competing metal oxide gas sensors using alternative technologies, technical specifications for the hotplate as well as the state of the art's limits are determined. The new material choice plays a key role in the device properties. The micro hotplate consists of a 100 ?m x 100 ?m membrane supported by thin beams of 1 ?m thickness, 150 ?m length and 10 to 40 ?m width. Alternatively, an HfB2 ? thin film resistive heater or a doped SiC heater are used. Temperatures of 600°C are achieved using a power consumption of only 32 mW resulting in a thermal heater efficiency of ~19 K/mW. The hexagonal geometry allows close packing of the hotplates in array structures with high mechanical strength. NO2 sensors with gas sensitive In2O3 layer are presented.