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Synthesis and field emission properties of different ZnO nanostructure arrays

机译:不同ZnO纳米结构阵列的合成及场发射特性

摘要

In this article, zinc oxide (ZnO) nanostructures of different shapes were fabricated on silicon substrate. Well-aligned and long ZnO nanowire (NW) arrays, as well as leaf-like ZnO nanostructures (which consist of modulated and single-phase structures), were fabricated by a chemical vapor deposition (CVD) method without the assistance of a catalyst. On the other hand, needle-like ZnO NW arrays were first fabricated with the CVD process followed by chemical etching of the NW arrays. The use of chemical etching provides a low-cost and convenient method of obtaining the needle-like arrays. In addition, the field emission properties of the different ZnO NW arrays were also investigated where some differences in the turn-on field and the field-enhancement factors were observed for the ZnO nanostructures of different lengths and shapes. It was experimentally observed that the leaf-like ZnO nanostructure is most suitable for field emission due to its lowest turn-on and threshold field as well as its high field-enhancement factor among the different synthesized nanostructures.
机译:本文在硅衬底上制备了不同形状的氧化锌(ZnO)纳米结构。通过化学气相沉积(CVD)方法在不借助催化剂的情况下制造了排列整齐且长的ZnO纳米线(NW)阵列以及叶状ZnO纳米结构(由调制和单相结构组成)。另一方面,首先通过CVD工艺制造针状ZnO NW阵列,然后化学蚀刻NW阵列。化学蚀刻的使用提供了获得针状阵列的低成本且方便的方法。此外,还研究了不同ZnO NW阵列的场发射特性,其中观察到了不同长度和形状的ZnO纳米结构在导通场和场增强因子方面的一些差异。实验观察到,由于在不同的合成纳米结构中,其最低的导通和阈值场以及其高的场增强因子,使得叶片状ZnO纳米结构最适合于场发射。

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