Investigation on the Amplitude of Random Telegraph Noise (RTN) in Nanoscale MOSFETs: Scaling Limit of “Hole in the Inversion Layer” Model

摘要

In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L;20nm and/or W;10nm, due to the non-negligible impact from source/drain and the failure of assumed equivalence to resistor network in ultra-scaled devices. This work provides a deeper understanding to this model and is helpful for accurate prediction of RTN amplitude in nanoscale devices and circuits.