This paper prepents monolithic microwave integrated circuits (MMIC) employing large size resonant tunneling diode (RTD) with high power at high frequencies. This is achieved by proper design of the resonating inductances which are realized by shorted microstrip transmission lines with low characteristic impedances (Z0 = 10.4 Ω). Two oscillators were fabricated using photolithography. Oscillation frequencies of 312 GHz delivering 0.15 mW and 262 GHz delivering 0.19 mW were measured for oscillators employing a single 4 μm × 4 μm and 5 μm × 5 μm RTD devices, respectively.
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