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Development of nanostructured, stress-free Co-rich CoPtP films for magnetic microelectromechanical system applications

机译:纳米结构,无应力的富钴CoPtP薄膜的开发,用于磁性微机电系统

摘要

Co-rich CoPtP alloys have been electrodeposited using direct current (dc) and pulse-reverse (PR) plating techniques. The surface morphology, crystalline structure, grain size, and magnetic properties of the plated films have been compared. The x-ray analysis and magnetic measurements reveal the presence of Co hcp hard magnetic phase with c axis perpendicular to the substrate for dc and in plane for PR plated films. The dc plated films have a granular structure in the micron scale with large cracks, which are manifestation of stress in the film. Only by using a combination of optimized PR plating conditions and stress relieving additive, we are able to produce 1-6 mu m thick (for 1 hour of plating), stress-free, and nanostructured (similar to 20 nm) Co-rich CoPtP single hcp phase at room temperature, with an intrinsic coercivity of 1500 Oe.
机译:富钴CoPtP合金已经使用直流(dc)和反向脉冲(PR)电镀技术进行了电沉积。比较了镀膜的表面形态,晶体结构,晶粒尺寸和磁性。 X射线分析和磁测量揭示了Co hcp硬磁相的存在,对于dc,c轴垂直于基板,对于PR镀膜,c轴垂直于基板。直流镀膜具有微米级的粒状结构,具有大的裂纹,这是膜中应力的表现。只有结合优化的PR镀覆条件和缓解应力的添加剂,我们才能生产1-6微米厚(镀敷1小时),无应力和纳米结构(约20 nm)的富CoPtP在室温下为单hcp相,固有矫顽力为1500 Oe。

著录项

  • 作者

    Kulkarni Santosh; Roy Saibal;

  • 作者单位
  • 年度 2007
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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