Thin-film-integrated power inductor on Si and its performance in an 8-MHz buck converter

摘要

This paper presents a microinductor fabricated on silicon using electrochemical techniques that has high efficiency in a low power dc–dc converter. Small signal measurements show a flat frequency response up to 20 MHz with a self resonant frequency of 130 MHz. The inductance at low frequency is approximately 440 nH with a dc resistance of 0.5 Ω, and a high quality factor of 11.7 at 5.5 MHz. The current handling capability test shows less than 10% decrease in inductance at 500-mA current. The performance of the microinductor has been compared to a conventional chip inductor in a commercially available 8-MHz buck converter. The converter maximum efficiency when using the microinductor is shown to be approximately 3% lower than the one using the conventional discrete chip inductor. However, the profile of the microinductor is much lower than that of the discrete chip inductor. The maximum efficiency of the microinductor in the converter is estimated to be approximately 92%.