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Vacuum field emission microelectronic devices based on silicon nanowhiskers

机译:基于硅纳米晶须的真空场致发射微电子器件

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摘要

Vacuum field emission devices have become a promising candidate for emerging display technology due to their interesting properties compared to conventional thermionic emission devices that require high temperature and power to operate. Unlike thermionic emission, field emission devices can induce the electrons to emit at low temperature; sharp and thin emitters on the cathode are desired in order to increase the field emission. Many candidates from other research groups, such as Carbon Nanotubes (CNTs), SiC and ZnO, appear to have high field emission, but their complicated fabrication processes are the drawback. The silicon nanowhiskers produced by Geological & Nuclear Sciences (GNS) using Electron-Beam Rapid Thermal Annealing (EB-RTA) are an alternative material that is fast, inexpensive and uncomplicated to produce. They are based on the thermal desorption of silicon oxide, which forms silicon nanowhiskers on the silicon wafer in a short duration. Field emission diode structures on Silicon on Insulator (SOI) wafers were fabricated in order to investigate the field emission due to these GNS silicon nanowhiskers. An uncomplicated fabrication process using photolithography and etching process was developed. Electron beam lithography (EBL) was also used to create the different feature sizes directly onto the SOI wafer. The silicon nanowhiskers grown on these structures are as high as 35 nm with density distribution up to 30 µm⁻¹. The electrical characteristics of these devices are diode-like when the voltage range from -40 V to 40 V is applied. The best samples produced an emitted current as high as 2 mA, which is suitable for many applications, such as flat panel displays, x-ray sources and high frequency devices. However, in some cases, the diode structures failed to show the diode-like characteristics, perhaps as a result of bad contact connections or the emitters have been worn out after applying high voltage for some time. Device life time and stability were also considered and investigated via a number of electrical measurements for a period of time as long as one hour in this study. Even though these nanowhiskers have shown promising results, there are still many aspects to be considered to improve the experiments, such as the vacuum system and better contacts.
机译:真空场致发射器件由于其与需要高温和高功率才能运行的传统热电子发射器件相比具有令人感兴趣的特性,已经成为新兴显示技术的有希望的候选者。与热电子发射不同,场发射器件可以感应电子在低温下发射;因此,电子发射可以通过电子来实现。为了增加场发射,需要在阴极上形成尖锐且薄的发射器。来自其他研究小组的许多候选人,例如碳纳米管(CNTs),SiC和ZnO,似乎都具有高场发射,但其复杂的制造工艺是缺点。由地质与核科学(GNS)使用电子束快速热退火(EB-RTA)生产的硅纳米晶须是一种替代材料,其生产速度快,成本低且不复杂。它们基于氧化硅的热解吸,该氧化解吸可在短时间内在硅晶片上形成硅纳米晶须。为了研究由于这些GNS硅纳米晶须引起的场发射,在绝缘体上硅(SOI)晶片上制造了场发射二极管结构。开发了使用光刻和蚀刻工艺的简单制造工艺。电子束光刻(EBL)也被用来直接在SOI晶圆上创建不同的特征尺寸。在这些结构上生长的硅纳米晶须高达35 nm,密度分布高达30 µm -1。当施加-40 V至40 V的电压范围时,这些器件的电气特性类似于二极管。最好的样品产生的发射电流高达2 mA,适用于许多应用,例如平板显示器,X射线源和高频设备。然而,在某些情况下,二极管结构无法显示出类似二极管的特性,这可能是由于不良的接触连接或在施加高电压一段时间后发射极已经磨损所致。在这项研究中,还考虑了器件的使用寿命和稳定性,并通过多次电气测量进行了长达一小时的测量。尽管这些纳米晶须显示出令人鼓舞的结果,但仍有许多方面需要改进实验,例如真空系统和更好的接触。

著录项

  • 作者

    Thongpang Sanitta;

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  • 年度 2007
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  • 原文格式 PDF
  • 正文语种 en
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