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Electroforming processes for platinum nanoisland thin films

机译:铂纳米岛薄膜的电铸工艺

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摘要

An investigation of the electroforming processes for platinum discontinuous thinfilms is detailed. Current–voltage characteristics, for metal nanoislandsdeposited by sputtering, were obtained in vacuum and air and typically showedvoltage-controlled negative resistance (VCNR) behaviour. The current maximumshifted with the electrode separation. Electroforming under high current densityregimes was non-regenerative as samples showed irreversible resistance changes.SEM examination of the film revealed a change in the metal microstructure. Suchmodifications arise as a result of the current flowing through the film inducingelectro and thermal migration. Current-induced effects were studied by modellingthe metal nanoisland (MN) layer as an array of cubic cells. Plots of currentdistribution showed that hot-spots develop along conductive paths.Electromigration combined with resistive heating can lead to progressivedestruction of current channels at these hot-spots. Hence, current profiles andSEM micrographs were interpreted as evidence of a ‘macroscopic’ electricalbreakdown of sample conduction due to microstructural modifications of the thinfilm. The reduction of ohmic component and consequent resistive heating alongthe current channels prevented the metal migration and stable current profileswere obt
机译:详细研究了不连续铂薄膜的电铸工艺。在真空和空气中获得了通过溅射沉积的金属纳米岛的电流-电压特性,并且通常表现出电压控制的负电阻(VCNR)行为。电流随着电极间距而最大偏移。高电流密度条件下的电铸是不可再生的,因为样品显示出不可逆的电阻变化。SEM薄膜检查表明金属微观结构发生了变化。由于电流流过薄膜引起电迁移和热迁移,因此产生了这种变化。通过将金属纳米岛(MN)层建模为立方单元阵列,研究了电流感应效应。电流分布图表明,热点沿着导电路径发展,电迁移与电阻加热相结合会导致这些热点处的电流通道逐渐破坏。因此,当前的轮廓和SEM显微照片被解释为由于薄膜的微观结构改变而导致样品导电发生“宏观”电击穿的证据。欧姆分量的减少以及随之而来的沿电流通道的电阻加热阻止了金属的迁移,并稳定了电流分布

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