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High throughput combinatorial screening of Cu-Zn-Sn-S thin film libraries for the application of Cu2ZnSnS4 photovoltaic cells

机译:高通量组合筛选Cu-Zn-Sn-S薄膜库用于Cu2ZnSnS4光伏电池的应用

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摘要

The naturally occurring mineral of Cu2ZnSnS4 (CZTS) is a promising alternative absorber layer for thin film based photovoltaic devices. It has the remarkable advantage that it consists of abundant, inexpensive and non-toxic elements compared to its crystallographically related and highly successful counterparts: the Cu(In,Ga)(S,Se)2 (CIGSSe) and CuIn(S, Se)2 (CISSe) materialsystems. Therefore, there is real commercial potential for reduced material costs and improved device efficiencies. A two-stage high throughput combinatorial process for the fabrication of Cu-Zn-Sn-S thin film libraries is presented, which consists of either sequentially stacking or co-depositing Cu,Sn and Zn precursor layers by DC magnetron sputtering followed by a sulphurisation process. Sputtering conditions and target-substrate geometry aredeveloped to give compositionally graded Cu-Zn-Sn precursor layers spanning a wide spatial region around the point of stoichiometry. Conversion into Cu-Zn-Sn-S libraries is achieved by thermally evaporating a uniform layer of sulphurdirectly onto the metal alloy and annealing the sample at 500 °C in a furnace.Effects of the precursor composition on the structural properties of the films prior to the incorporation of sulphur are investigated. The sulphurised librariesare then studied by Scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy as a function of composition, to assess the effects on morphology and phase formation. Observations of changes in lattice parameters and crystallinity are clear. The opto-electronic and electrical properties of the CZTS film libraries are measured using photoconductivity and hot point probe techniques, respectively. Changes in the band gap and conductivity type are studied as a function of atomic ratios. Based on high performing compositions, devices have been fabricated with the highest achieving cell at 1.26 %. The observations are discussed in the context of the particular compositions and synthesis conditions, and recommendations are made for further work.
机译:Cu2ZnSnS4(CZTS)的天然矿物是用于薄膜光伏器件的有希望的替代吸收层。与晶体学上相关且非常成功的同类产品相比,它具有大量,廉价且无毒的元素,具有显着的优势:Cu(In,Ga)(S,Se)2(CIGSSe)和CuIn(S,Se) 2(CISSe)材料系统。因此,存在降低材料成本和提高装置效率的实际商业潜力。提出了一种用于制造Cu-Zn-Sn-S薄膜库的两阶段高通量组合工艺,该工艺包括通过直流磁控溅射然后硫化将Cu,Sn和Zn前体层顺序堆叠或共沉积。处理。开发了溅射条件和目标衬底的几何形状,以提供组成渐变的Cu-Zn-Sn前体层,该层跨越化学计量点周围的宽广空间区域。转化成Cu-Zn-Sn-S库是通过直接将均匀的硫磺层热蒸发到金属合金上并在炉中在500°C下对样品进行退火来实现的。前驱体组成对薄膜结构性能的影响研究了硫的结合。然后通过扫描电子显微镜(SEM),X射线衍射(XRD)和拉曼光谱研究作为组成函数的硫化库,以评估对形态和相形成的影响。晶格参数和结晶度变化的观察很清楚。 CZTS薄膜库的光电性能和电性能分别使用光电导率和热点探针技术进行测量。研究了带隙和电导率类型随原子比的变化。基于高性能的成分,已制造出具有最高实现单元(1.26%)的器件。在特定的组成和合成条件的背景下讨论了这些观察结果,并提出了进一步工作的建议。

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    Hutchings K D;

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  • 年度 2014
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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