Numerical simulation of 2D Silicon MESFET and MOSFET described by the MEP based energy-transport model with a mixed finite elements scheme

摘要

The Mixed Finite Element approximation scheme presented in is used to simulate a consistent hydrodynamical model for electron transport in semiconductors, free of any fitting parameters, formulated on the basis of the maximum entropy principle (MEP) in cite{AnRo,Ro1,Ro2}.. 2D-MESFET and 2D-MOSFET Silicon devices are simulated in the parabolic band approximation. Comparison with the results obtained by the Stratton model are presented for completeness.