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Improved Induced Diode Photodetectors by Increased Fixed Charge in PECVD Amorphous Silicon Nitride

机译：通过增加PECVD非晶态氮化硅中的固定电荷来改进感应二极管光电探测器

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Bazilchuk Molly Strimbeck;
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年度 2014
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1. Aging- and thermal-annealing effects on the vibrational- and microstructural-properties of PECVD grown hydrogenated amorphous silicon carbon nitride thin films [J] . Rahman Mohd Azam Abdul, Goh Boon Tong, Chiu Wee Siong, Vibrational Spectroscopy: An International Journal devoted to Applications of Infrared and Raman Spectroscopy . 2018,第期

机译：衰老和热退火对PECVD生长氢化非晶碳氮化膜的振动和微观结构性能的影响
2. Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications [J] . NafisAhmed, Chandra BhalSingh, S.Bhattacharya, Conference Papers in Science . 2013,第2期

机译：用于太阳能电池的PECVD生长的无氨非晶氮化硅薄膜的拉曼光谱和FTIR研究
3. Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties [J] . Jozef Huran, Albín Valovi?, Michal Ku?era, Journal of Electrical Engineering . 2012,第5期

机译：通过PECVD技术制备的氢化非晶硅碳氮化物膜：性能
4. Hydrogenated amorphous silicon and silicon nitride deposited at less than 100°C by ECR-PECVD for thin film transistors [C] . Andrew J. Flewitt, Andrew P. Dyson, John Robertson, Materials Research Society Symposium . 2001

机译：通过ECR-PECVD用于薄膜晶体管的氢化非晶硅和含硅氮化硅沉积在小于100℃下沉积
5. Improved understanding and control of the properties of PECVD silicon nitride and its applications in multicrystalline silicon solar cells [D] . Cai, Li 1997

机译：增强对PECVD氮化硅特性的了解和控制及其在多晶硅太阳能电池中的应用
6. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon [O] . Sonia Ben Slama, Messaoud Hajji, Hatem Ezzaouia 2012

机译：通过PECVD在镍金属化多孔硅上沉积的非晶硅薄膜的结晶
7. Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes [O] . Bijlsma, S.J., Bijlsma, Sipke J., van Kranenburg, H., 1996

机译：非晶态氢化富硅氮化硅薄膜二极管的电击穿
8. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells [R] . Rohatgi, A. , Narasimha, S. , Ruby, D. S. 1998

机译：通过快速热氧化物/ pECVD氮化硅叠层有效钝化低电阻率硅表面及其在钝化后部和双面si太阳能电池中的应用

Improved Induced Diode Photodetectors by Increased Fixed Charge in PECVD Amorphous Silicon Nitride

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