In the single crystal silicon Czochlarski process, pull rate has a great impact on its production. More and more people put their eyes on optimizing the structure of Cz furnace to increase the pull rate, but experiments require a lot of capital to support. Due to the high cost and risk of crystal growth experiments, numerical simulation of Cz process becomes highly used as an effective tool to improve the structure of furnace and analysis the mechanism during the process. Based on a SINTEF Cz furnace, we wanted to investigate the possibility to install a cooling jacket around crystal to improve the crystallization. By comparing the numerical results before and after installing the cooling jacket, it was found that the new cases shows a satisfied conclusion on improving the pull rate and reducing the power consumption.
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