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Exploring and exploiting charge-carrier confinement in semiconductor nanostructures:heterodimensionality in sub-monolayer InAs in GaAs and photoelectrolysis using type-II heterojunctions

机译：探索和利用半导体纳米结构中的载流子限制：GaAs中亚单层InAs的异质性和使用II型异质结的光电解

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Harrison Samuel;
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1. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs [J] . S. Harrison, M. P. Young, P. D. Hodgson, Physical review. B, Condensed Matter And Materals Physics . 2016,第8期

机译：GaAs中堆叠的亚单层InAs的异质电荷载流子限制
2. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs [J] . Harrison S., Young M. P., Hodgson P. D., Physical review, B . 2016,第8期

机译：GaAs中堆叠的亚单层InAs的异质电荷载流子限制
3. Band alignments and quantum confinement in (111) GaAsN/InAs strain-balanced nanostructures [J] . L Bhusal, A Alemu, A Freundlich Nanotechnology . 2004,第4期

机译：（111）GaAsN / InAs应变平衡纳米结构中的能带排列和量子限制
4. Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures [C] . Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Nanophotonics Conference . 2020

机译：InGaAs基体厚度对自组装亚单层InAs量子点异质结构中光学性质和应变分布的影响
5. Electrical, optical, and morphological studies of quantum confined InAs and GaAs semiconductor nanoparticles. [D] . Halaoui, Lara Issam. 1997

机译：量子限制的InAs和GaAs半导体纳米粒子的电学，光学和形态学研究。
6. Photoelectrolysis Using Type-II Semiconductor Heterojunctions [O] . S. Harrison, M. Hayne -1

机译：使用II型半导体异质结的光电解
7. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs [O] . Harrison Samuel, Young Matthew, Hodgson Peter David, 2016

机译：GaAs中堆叠的亚单层InAs的异质电荷载流子限制
8. Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors. [R] . A. V. Barve J. O. Kim S. Adhikary S. Sengupta Y. D. Sharma 2013

机译：多堆Inas / InGaas亚单层量子点红外光电探测器。

Exploring and exploiting charge-carrier confinement in semiconductor nanostructures:heterodimensionality in sub-monolayer InAs in GaAs and photoelectrolysis using type-II heterojunctions

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