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Kinetic theory of shot noise in nondegenerate diffusive conductors.

机译:非退化扩散导体中散粒噪声的动力学理论。

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摘要

We investigate current fluctuations in nondegenerate semiconductors, on length scales intermediate between the elastic and inelastic mean free paths. We present an exact solution of the nonlinear kinetic equations in the regime of space-charge limited conduction, without resorting to the drift approximation of previous work. By including the effects of a finite voltage and carrier density in the contact region, a quantitative agreement is obtained with Monte Carlo simulations by González et al., for a model of an energy-independent elastic scattering rate. The shot-noise power P is suppressed below the Poisson value PPoisson=2eĪ (at mean current Ī) by the Coulomb repulsion of the carriers. The exact suppression factor is close to 1/3 in a three-dimensional system, in agreement with the simulations and with the drift approximation. Including an energy dependence of the scattering rate has a small effect on the suppression factor for the case of short-range scattering by uncharged impurities or quasielastic scattering by acoustic phonons. Long-range scattering by charged impurities remains an open problem.
机译:我们研究介于弹性和非弹性平均自由程之间的长度尺度上非退化半导体的电流波动。我们提出了一种在空间电荷受限传导状态下非线性动力学方程的精确解,而无需借助先前工作的漂移近似。通过在接触区域中包括有限电压和载流子密度的影响,可以通过GonzÃlez等人的Monte Carlo模拟获得与能量无关的弹性散射速率模型的定量协议。通过载波的库仑斥力将散粒噪声功率P抑制在Poisson值PPoisson =2eĪ(平均电流Ī)以下。与仿真和漂移近似一致,在三维系统中,精确的抑制因子接近1/3。对于不带电杂质的短程散射或声子的准弹性散射,包括散射速率的能量依赖性对抑制因子的影响很小。带电杂质的远距离散射仍然是一个未解决的问题。

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