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The low energy electronic band structure of bilayer graphene.

机译:双层石墨烯的低能电子能带结构。

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摘要

We employ the tight binding model to describe the electronic band structure of bilayer graphene and we explain how the optical absorption coefficient of a bilayer is influenced by the presence and dispersion of the electronic bands, in contrast to the featureless absorption coefficient of monolayer graphene. We show that the effective low energy Hamiltonian is dominated by chiral quasiparticles with a parabolic dispersion and Berry phase 2π. Layer asymmetry produces a gap in the spectrum but, by comparing the charging energy with the single particle energy, we demonstrate that an undoped, gapless bilayer is stable with respect to the spontaneous opening of a gap. Then, we describe the control of a gap in the presence of an external gate voltage. Finally, we take into account the influence of trigonal warping which produces a Lifshitz transition at very low energy, breaking the isoenergetic line about each valley into four pockets.
机译:我们使用紧密结合模型来描述双层石墨烯的电子能带结构,并解释了与单层石墨烯的无特征吸收系数相比,双层的光吸收系数如何受到电子带的存在和分散的影响。我们表明,有效的低能哈密顿量被具有抛物线色散和Berry相2π的手性拟粒子所控制。层不对称会在光谱中产生间隙,但是,通过将充电能量与单粒子能量进行比较,我们证明了无掺杂,无间隙的双层对于间隙的自发开口是稳定的。然后,我们描述在存在外部栅极电压的情况下对间隙的控制。最后,我们考虑了三角翘曲的影响,该翘曲在非常低的能量下会产生Lifshitz跃迁,从而将每个山谷周围的等能量线分成四个凹穴。

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