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Maximizing throughput over parallel wire structures in the deep submicrometer regime.

机译:在深亚微米范围内使平行线结构上的通量最大化。

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摘要

In a parallel multiwire structure, the exact spacing and size of the wires determine both the resistance and the distribution of the capacitance between the ground plane and the adjacent signal carrying conductors, and have a direct effect on the delay. Using closed-form equations that map the geometry to the wire parasitics and empirical switch factor based delay models that show how repeaters can be optimized to compensate for dynamic effects, we devise a method of analysis for optimizing throughput over a given metal area. This analysis is used to show that there is a clear optimum configuration for the wires which maximizes the total bandwidth. Additionally, closed form equations are derived, the roots of which give close to optimal solutions. It is shown that for wide buses, the optimal wire width and spacing are independent of the total width of the bus, allowing easy optimization of on-chip buses. Our analysis and results are valid for lossy interconnects as are typical of wires in submicron technologies.
机译:在平行多线结构中,导线的确切间距和尺寸决定着接地平面和相邻信号传输导体之间的电阻和电容的分布,并直接影响延迟。通过使用将几何图形映射到导线寄生物的封闭式方程式以及基于经验开关因子的延迟模型来显示如何优化中继器以补偿动态影响,我们设计了一种分析方法来优化给定金属区域的吞吐量。该分析用于表明存在明显的最佳配置,可最大程度地提高总带宽。另外,导出了封闭形式的方程,其根给出了接近最优的解。结果表明,对于较宽的总线,最佳的导线宽度和间距与总线的总宽度无关,从而可以轻松优化片上总线。我们的分析和结果对于有损互连有效,如亚微米技术中的导线典型。

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