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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

机译:基于InAs的低带隙中红外热光电阵列

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摘要

We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.
机译:我们展示了首个能够在低至345°C的温度下与热源一起运行的低带隙热光电(TPV)阵列,这是有史以来的最低记录。各个阵列元素基于窄带隙InAs / InAs0.61Sb0.13P0.26光电二极管结构。在950°C下使用黑体,在室温下单个元素的外部功率转换效率约为3%。制作了25个元素和65个元素的阵列,并在345-950°C的不同源温度下表现出TPV响应,适用于废热和其他应用中的发电。

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