BSIM Model in APLAC

摘要

The report documents the APLAC implementation of the BSIM (Berkeley Short-channelIGFET Model) MOS model. The main purpose of the text is to supplement the reference manual of APLAC. Only parameter names are presented in the manual. The document provides all the equations for the users of the BSIM model. The standard formulation of BSIM is extended to include noise sources and the most important temperature dependencies. The convergence problems of the original formulation at V(sub ds) = 0 are fixed using a new heuristic method.