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Investigation of III-V Superlattices and Heterostructures by Convergent-BeamElectron Diffraction

机译：用收敛束电子衍射研究III-V超晶格和异质结构

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;Contents: Theory of CBED (Convergent Beam Electron Diffraction) and computation;Investigation of GaAs/AlAs superlattices by CBED; The interpretation of the FOLZ (First Order Lave Zone) reflection fine structure in CBED patterns of GaInAsP; Fast computer simulation of TEM images showing one-dimensional features and the effect of illumination coherence on the images.

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作者
Gong, H.;
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年度 1992
页码 1-165
总页数 165
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Superlattices; Gallium arsenides; Aluminum arsenides; Computerized simulation; Theses;

机译：超晶格;砷化镓;砷化铝;计算机模拟;论文;

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专利

1. Transforming Common III-V and II-VI Semiconductor Compounds into Topological Heterostructures: The Case of CdTe/InSb Superlattices [J] . Liu Qihang, Zhang Xiuwen, Abdalla L. B., Advanced Functional Materials . 2016,第19期

机译：将常见的III-V和II-VI半导体化合物转变为拓扑异质结构：CdTe / InSb超晶格的情况
2. SIMS analyses of III-V semiconductor quantum-well and superlattice heterostructures [J] . Gerardi C Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 1997,第6期

机译：III-V半导体量子阱和超晶格异质结构的SIMS分析
3. Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III-V heterostructure underlap DG MOSFET [J] . Hemant Pardeshi, Sudhansu Kumar Pati, Godwin Raj, Physica, E. Low-dimensional systems & nanostructures . 2012,第3期

机译：研究III-V型异质结构下叠式DG MOSFET中由于栅极未对准，栅极偏置和下叠长度引起的不对称效应
4. TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices [C] . G Salviati, C Ferrari, L Lazzarini, Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：III-V格子错配多层和超晶格的TEM和X射线衍射研究
5. Structural characterization of II-VI and III-V compound semiconductor heterostructures and superlattices [D] . Ouyang, Lu 2012

机译：II-VI和III-V复合半导体异质结构和超晶体的结构表征
6. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors [O] . Osmar FP dos Santos, Sara CP Rodrigues, Guilherme M Sipahi, 2011

机译：基于III-V族半导体的p型掺杂超晶格的垂直传输研究
7. Transforming common III-V and II-VI semiconductor compounds into topological heterostructures: The case of CdTe/InSb superlattices [O] . Liu, Qihang, Zhang, Xiuwen, Abdalla, L. B., 2016

机译：将常见的III-V和II-VI半导体化合物转化为拓扑异质结构：CdTe / Insb超晶格的情况
8. Investigation of III-V Superlattices and Heterostructures by Convergent-BeamElectron Diffraction [R] . Gong, H. 1992

机译：用收敛束电子衍射研究III-V超晶格和异质结构

Investigation of III-V Superlattices and Heterostructures by Convergent-BeamElectron Diffraction

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