Noise Temperature Measurements on Wafer

摘要

The NIST Noise Project has developed the theoretical formalism and experimentalmethods for performing accurate noise-temperature measurements on wafer. This report presents the theoretical formulation and decribes the design, methods, and results of tests performed to verify the authors' ability to measure on-wafer noise temperature. With known off-wafer noise sources, several different configurations were used to obtain different, known, on-wafer noise temperatures. These were then measured, and the results were compared to predictions. Good agreement was found, with a worst-case disagreement of 2.6 percent. The tests also confirm the authors' ability to produce known noise temperatures on wafer.