Radiation Tolerant Circuits Designed in 2 Commercial 0.25(micro) CMOS Processes

摘要

Characterization of simple devices as well as complex circuits, in two commercial0.25 micron processes, demonstrates a high level (up to 58 Mrad) radiation tolerance of these technologies. They are also very likely to be immune to single event gate damage according to our results form 200MeV-protons irradiation.