Comparison of Emitters Diffused Using an IR Belt Furnace and a POCI(sub 3) System

摘要

In this study emitters diffused using an infrared (IR) lamp heated belt furnaceare compared to emitters made with a POCl(sub 3) system. Emitter diffusion in an IR belt furnace was optimized in such a way that the results on multi-crystalline solar cells can compete with those for cells made using a POCl(sub 3) batch system. For solar cells made of long lifetime wafers selected from the top and middle of an ingot, the I-V parameters are the same for cells diffused with POCl(sub 3), and with IR. An important advantage of IR diffusion is that it improves the efficiency of cells from the bottom of the ingot to the same level as of wafers higher up in the ingot due to improved minority carrier lifetime.