Hydrogen Passivation of Iron in Multicrystalline Silicon

摘要

Concentrations of interstitially dissolved Fe can be measured by lifetime measurements before and after dissociation of FeB pairs. It allows the measurement of iron concentrations as low as 5x10 to the 10th power cm to the minus 3 power. The technique is applied to determine the change in Fe concentration after different solar cell process steps. In particular, hydrogen passivation of iron in multicrystalline silicon wafers is investigated. The results indicate that the passivation can be accurately followed with this technique.