Proceedings of the International Symposium on Integrated Ferroelectrics (16th) (ISIF-16). Part 3 of 6. Volume 66 (2004). Held in Gyeongju, Korea on April 5-8, 2004.

摘要

The 16th International Symposium on Integrated Ferroelectrics (ISIF 2004) took place on April 5-8 at Hotel Hyundai Gyeongju located in the Bomun Lake Resort in the suburb of Gyeongju, Korea, which is the most famous historic city in Korean peninsular. It was held, in particular, jointly with the 5th Korean Workshop on High Dielectric and Ferroelectric Devices and Materials. The ISIF 2004 was again proved to be the worldwide prime forum for those involved in the science, technology and manufacturing of integrated ferroelectric thin film devices and products including the FeRAM which has been considered as one of the most promising next-generation memory devices. Around 400 scientists and engineers attended the meeting from 20 different countries around the world. They presented 415 technical papers including 3 plenary lectures, 46 invited presentations, 128 contributed oral presentations and 243 poster presentations covering whole spectrum of current topics on ferroelectric thin films and devices such as FeRAM, MEMS, Microwave components, high-K dielectrics, etc.