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Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects

机译：纳米级薄膜和线路互连有效电阻率建模仿真程序的实现

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摘要

A computer program that simulates the impact of the size effect on the effective resistivity of line and film conductors is described. Flowcharts and the program code are provided as appendices.

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Yarimbiyik, A. E.; Zaghloul, M. E.; Schafft, H. A.; Allen, R. A.; Blackburn, D. L.;
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年度 2006
页码 p.1-21
总页数 21
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Thin films; Scattering; Line boundaries; Grain boundaries; Computerized simulation; Program parameters; Computer models; Size effects; Implementation; Temperature effects; Grain sizes; Computer software;

机译：薄膜;散射;线边界;晶界;计算机模拟;程序参数;计算机模型;尺寸效应;实施;温度效应;晶粒尺寸;计算机软件;

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1. Modeling and simulation of resistivity of nanometer scale copper [J] . A. Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Microelectronics & Reliability . 2006,第7期

机译：纳米铜电阻率建模与仿真
2. Impact of line edge roughness on the resistivity of nanometer-scale interconnects [J] . W. Steinhoegl, G. Schindler, G. Steinlesberger, Microelectronic Engineering . 2004,第1a4期

机译：线边缘粗糙度对纳米级互连电阻率的影响
3. Modeling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with Cu interconnects for scaled technologies [J] . Raychowdhury A., Roy K. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 2006,第1期

机译：金属碳纳米管互连的建模以进行电路仿真，并与可扩展技术的铜互连进行比较
4. Resistivity of nanometer-scale films and interconnects: model and simulation [C] . Yarimbiyik, A.E., Schafft, Integrated Reliability Workshop Final Report, 2005 IEEE International . 2005

机译：纳米级薄膜和互连的电阻率：模型和仿真
5. Simulation and measurement of nanometer-scale resistivity of copper films for interconnect applications. [D] . Yarimbiyik, Arif Emre. 2007

机译：用于互连应用的铜膜纳米级电阻率的仿真和测量。
6. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects [O] . Hideharu Shimizu, Shuji Nagano, Akira Uedono, 2013

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7. GROWTH AND STRUCTURE OF METALLIC BARRIER LAYERS AND INTERCONNECT FILMS II: ATOMISTIC SIMULATIONS OF FILM DEPOSITION ONTO INCLINED SURFACES [O] . J. Dalla Torrea, B (dallatorre@bell-labs. Com, G. H. Gilmera, 2015

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8. Quantitative model for interpreting nanometer scale hardness measurements of thin films. [R] . Poisl, W. H., Fabes, B. D., Oliver, W. C. 1993

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Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects

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