Blue Light Emitting Luminescent Diodes of Silicon Carbide

摘要

A substantially improved procedure for the fabrication of SiC-LED's (Maximum wavelength 475 nm) by liquid phase epitaxy on 6 H silicon carbide substrateS is described. The quantum efficiency of encapsulated diodes is increased to 0.00012. The reproducibility of fabrication is improved by refined substrate control and preparation techniques. The epitaxial process is simplified, the surface of the layers is improved and doping concentrations are optimized. Reliable bonding of contacts is achieved. Diced chips show a decrease in quantum efficiency and a green shift of the emission spectrum, even under low current density conditions. This effect is avoided by mesa etching and an improved mounting technique.