Determination of Large Signal Characteristics for UHF Bipolar Power Transistors

摘要

Large signal behavior of Ultra High Frequency bipolar power transistors has been studied. The traditional Gummel and Poon model has been extended to include the package parasitic inductances and the model parameters have been determined by Direct Current, low frequency capacitance and high frequency scattering parameter measurements. The voltage and current waveforms as well as large signal impedance and gain values with respect to the power level have been measured. The results have been used in investigating the Gummel and Poon model accuracy at high frequencies. Finally the sensitivities of the large signal impedance and gain to some transistor model parameters have been calculated.