Bulk and Surface Contributions to Enhanced Solar-Cell Performance Induced byAluminium Alloying

摘要

The authors have used the Light Beam Induced Current Decay technique to study Alalloying effects in semi-crystalline Si solar cells. With the technique the authors are able to separate the minority-carrier diffusion length in the Si bulk and the effective back-surface recombination velocity. The authors measured an increase in diffusion length of about 30% and a reduction of the effective back-surface recombination velocity to = or < 1000 cm/s after Al-alloying.The authors investigated the effects of various processing conditions on both recombination mechanisms. Consequences for low-cost Si solar-cell design are discussed.