Comparative Study of 1.06 Micron Detectors for Nd-YAG Laser Applications

摘要

A literature survey is presented, making a comparative study of the state of the art in detectors, detector concepts, and detector technology. The theory and practical considerations of detectors for 1.06 micron laser radiation are discussed and it is shown that only photon detectors which are capable of operating at 400 Mbps at less than 100 nW received power to achieve bit error rates less than 10 to the -6 power. The possibility of improved detector-amplifier combination performance using GaAs FET amplifiers is pointed out. A feasibility study of the growth of compound semiconductor epitaxial layers and manufacturing procedures for producing 1 to 1.6 micron detectors, is presented.