Optimization of Solar Cells for Air Mass Zero Operation and a Study of Solar Cells at High Temperatures

摘要

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.