首页> 美国政府科技报告 >Dislocation-induced Charges in Quantum Dots: Step Alignment and Radiative Emission

【24h】

Dislocation-induced Charges in Quantum Dots: Step Alignment and Radiative Emission

机译：量子点中的位错诱导电荷：阶跃对准和径向发射

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

A transition between two types of step alignment was observed in a multilayered InGaAs/GaAs quantum-dot (QD) structure. A change to larger QD sizes in smaller concentrations occurred after formation of a dislocation array.

著录项

作者
Leon, R.; Okuno, J.; Lawton, R.; Stevens-Kalceff, M.; Phillips, M.; Zou, J.; Cockayne, D.; Lobo, C.;
展开▼
作者单位

展开▼
年度 1999
页码 1-11
总页数 11
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
ALIGNMENT; GALLIUM ARSENIDES; INDIUM GALLIUM ARSENIDES; QUANTUM DOTS; radiative emission step alignment InGaAs/GaAs quantum-dot dislocation array;

机译：对准;砷化镓;铟砷化镓;量子点;辐射发射步骤对准InGaas / Gaas量子点位错阵列;

相似文献

外文文献
中文文献
专利

1. Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission [J] . A. Urbańczyk G. J. Hamhuis and R. Nötzel Applied Physics Letters . 2010,第11期

机译：InGaAs量子点阵列上In纳米晶体的应变驱动对准和耦合等离子体激元量子点发射
2. Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission [J] . A. Urbanczyk, G. J. Hamhuis, R. Noetze Applied Physicsletters . 2010,第11期

机译：InGaAs量子点阵列上In纳米晶体的应变驱动对准和耦合等离子体激元量子点发射
3. Nongeminate radiative recombination of free charges in cation-exchanged PbS quantum dot films [J] . Marshall Ashley R., Beard Matthew C., Johnson Justin C. Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature . 2016,第Null期

机译：阳离子交换的PbS量子点薄膜中的自由电荷的非对原子辐射复合
4. Dislocation-induced spatial alignment of self-assembled InAs/GaAs quantum dots [C] . H.S.Lee, J.Y.Lee, T.W.Kim, Materials Research Society Symposium . 2003

机译：脱位诱导的自组装INAS / GaAs量子点的空间对准
5. First principle study on interfacial energetic alignment and charge transfer in quantum dots functionalized via metal-organic dye. [D] . Cui, Peng. 2016

机译：通过金属有机染料功能化的量子点中界面能对准和电荷转移的第一原理研究。
6. Light-Emitting Quantum Dot Transistors: Emission atHigh Charge Carrier Densities [O] . Julia Schornbaum, Yuriy Zakharko, Martin Held, -1

机译：发光量子点晶体管：在处的发射高电荷载流子密度
7. Dislocation-induced changes in quantum dots: Step alignment and radiative emission [O] . Leon, R, Okuno, JO, Lawton, RA, 1999

机译：位错引起的量子点变化：台阶对准和辐射发射

Dislocation-induced Charges in Quantum Dots: Step Alignment and Radiative Emission

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅