VACUUM DEPOSITION OF III - V SEMICONDUCTOR MATERIALS BY THE THREE-TEMPERATURE {DEPOSITION-METHOD

摘要

The work reported, herewith was conducted as a part of the 1967 Summer Faculty Fellowship Program. Preliminary evaluation films of InSb have been formed by simultaneous vacuum deposition of indium and antimony. Mobility values of 300 cm2 /volt-second were measured. This represents an improvement over the CdSe films currently under study for thin film device applications. Experimental procedures are detail¬ed together with recommendations for future work.