首页> 美国政府科技报告 >Growth of multilayered epitaxial films by pulsed excimer laser ablation

【24h】

Growth of multilayered epitaxial films by pulsed excimer laser ablation

机译：通过脉冲准分子激光烧蚀生长多层外延膜

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described.

著录项

作者
Lowndes, D. H.;
展开▼
作者单位

展开▼
年度 1993
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor Materials ; Ablation ; Alloys ; Crystal Growth ; Vapor Phase Epitaxy;

机译：半导体材料;烧蚀;合金;晶体生长;气相外延;

相似文献

外文文献
中文文献
专利

1. Orientated growth of V2O5 electrochromic thin films on transparent conductive glass by pulsed excimer laser ablation technique [J] . Fang GJ., Wang YQ., Liu HH., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2000,第23期

机译：脉冲准分子激光烧蚀技术在透明导电玻璃上定向生长V2O5电致变色薄膜
2. Nucleation and growth of epitaxial La_(1-x)Ca_xCoO_(3-δ) films on single crystalline substrates by pulsed reactive crossed-beam laser ablation [J] . A. Weidenkaff, C. Diecker, T. Lippert, Thin Solid Films . 2004,第Apr期

机译：脉冲反应交叉激光烧蚀在单晶衬底上外延La_（1-x）Ca_xCoO_（3-δ）薄膜的成核和生长
3. Excimer laser ablation of YSZ ceramic target; improved pulsed laser deposition control parameters for YSZ thin films grown on Si (100) substrates [J] . ROVENA PASCU, GEORGE EPURESCU Romanian reports in physics . 2018,第3期

机译：YSZ陶瓷靶的准分子激光烧蚀; Si（100）衬底上生长的YSZ薄膜的改进的脉冲激光沉积控制参数
4. Growth of multilayered epitaxial films by pulsed excimer laser ablation [C] . Lowndes, D.H. . 1993

机译：脉冲受激准分子激光烧蚀生长多层外延膜
5. Particle Generation by Pulsed Excimer Laser Ablation in Liquid: Hollow Structures and Laser-Induced Reactions. [D] . Yan, Zijie. 2011

机译：脉冲受激准分子激光烧蚀在液体中产生的颗粒：空心结构和激光诱导的反应。
6. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures [O] . Wenliang Wang, Weijia Yang, Yunhao Lin, -1

机译：在不同温度下通过脉冲激光沉积在AlN / Si异质结构上外延生长的GaN薄膜的微观结构和生长机理
7. Growth of multilayered epitaxial films by pulsed excimer laser ablation [O] . D.H. Lowndes -1

机译：脉冲准分子激光消融多层外延膜的生长
8. Growth of multilayered epitaxial films by pulsed excimer laser ablation [R] . Lowndes, D. H. 1993

机译：通过脉冲准分子激光烧蚀生长多层外延膜

Growth of multilayered epitaxial films by pulsed excimer laser ablation

摘要

著录项

相似文献

相关主题

期刊订阅